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NANOMOSFET

ShortChannelEffect
• When channel length is of the same order of
magnitude as the depletion layer widths.
• Operating speed increases
• Number of components per chip increases
Causes

• Limitation imposed on electron drift


characterstics in channel
• The modification of the Vt due to shortening
of the channel length.
Problems

• Dibl
• Surface scattering
• Velocity saturation
• Impact ionization
• Hot electron effect
Solutions

• Mobility enhancement using strain Si.


• Gate leakage reduction using high-k dielectric
• Performance using metal gates
• Advanced device structures.
Ex: Single gate
double gate
Triple gate
quadruple(GAA),
pigate.
Challenges

• Theoretical assessment via simulation of


nanodevices is a challenge because
1)bandstructures,
2) arbitrary wafer orientation,
3) quantam effects and
4)electrostatics
all are needed to be considered simultaneously.

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