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NANOMOSFET by Pragya Kushwaha

Short channel effects occur in nanoscale MOSFETs when the channel length becomes comparable to depletion layer widths, increasing operating speed and component density but limiting electron drift. This causes issues like drain induced barrier lowering, surface scattering, velocity saturation, and hot carrier effects. Solutions include using strained silicon for mobility enhancement, high-k dielectrics for gate leakage reduction, metal gates for performance improvements, and advanced device structures like single, double, triple, and quadruple gates. Simulating these nanodevices theoretically is challenging as band structures, wafer orientation, quantum effects, and electrostatics must all be considered simultaneously.

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Pragya Kushwaha
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154 views6 pages

NANOMOSFET by Pragya Kushwaha

Short channel effects occur in nanoscale MOSFETs when the channel length becomes comparable to depletion layer widths, increasing operating speed and component density but limiting electron drift. This causes issues like drain induced barrier lowering, surface scattering, velocity saturation, and hot carrier effects. Solutions include using strained silicon for mobility enhancement, high-k dielectrics for gate leakage reduction, metal gates for performance improvements, and advanced device structures like single, double, triple, and quadruple gates. Simulating these nanodevices theoretically is challenging as band structures, wafer orientation, quantum effects, and electrostatics must all be considered simultaneously.

Uploaded by

Pragya Kushwaha
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
Download as pptx, pdf, or txt
Download as pptx, pdf, or txt
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NANOMOSFET

ShortChannelEffect
• When channel length is of the same order of
magnitude as the depletion layer widths.
• Operating speed increases
• Number of components per chip increases
Causes

• Limitation imposed on electron drift


characterstics in channel
• The modification of the Vt due to shortening
of the channel length.
Problems

• Dibl
• Surface scattering
• Velocity saturation
• Impact ionization
• Hot electron effect
Solutions

• Mobility enhancement using strain Si.


• Gate leakage reduction using high-k dielectric
• Performance using metal gates
• Advanced device structures.
Ex: Single gate
double gate
Triple gate
quadruple(GAA),
pigate.
Challenges

• Theoretical assessment via simulation of


nanodevices is a challenge because
1)bandstructures,
2) arbitrary wafer orientation,
3) quantam effects and
4)electrostatics
all are needed to be considered simultaneously.

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